WFRF:(Xiong Zhiwei)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 04826naa a2200445 4500 | |
| 001 | oai:DiVA.org:liu-192693 | |
| 003 | SwePub | |
| 008 | 230329s2023 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1926932 URI |
| 024 | 7 | a https://doi.org/10.1016/j.nanoen.2023.1082812 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Xiong, Shaobingu Fudan Univ, Peoples R China; East China Normal Univ, Peoples R China4 aut |
| 245 | 1 0 | a Revealing buried heterointerface energetics towards highly efficient perovskite solar cells |
| 264 | 1 | b ELSEVIER,c 2023 |
| 338 | a print2 rdacarrier | |
| 500 | a Funding Agencies|National Science Foundation of China [22279034, 52261145698, 21875067]; National Key Research and Development Program of China [2022YFB3803300]; Shanghai Science and Technology Innovation Action Plan [22ZR1418900]; Fundamental Research Funds for the Central Universities; East China Normal University (ECNU) Multifunctional Platform for Innovation; China Postdoctoral Science Foundation [BX20220089]; ECNU Excellent Doctoral Student Academic Promotion Program [YBNLTS2021-043]; open research fund of Songshan Lake Materials Laboratory [2021SLABFK02]; National Natural Science Foundation of China [21961160720] | |
| 520 | a The heterointerfaces of charge-selective contacts are crucial in determining efficiency and stability of perovskite optoelectronic devices, where the fundamental knowledge of the buried heterointerface between perovskite and bottom charge transport layer is less well understood compared to the top interface. Herein, we systematically investigate the energetics at the perovskite/SnO2 buried heterointerface for an n-i-p perovskite solar cell (PSC) and the perovskite/PEDOT:PSS buried heterointerface for a p-i-n one, respectively. In contrast to previous cognitions, we discover a perovskite transition phase at the buried interface region that originates from the chemical bonding interaction with the bottom charge transport layer. The transition phase causes an energy level barrier and induces defects, impeding charge transport across the heterointerface. These detrimental effects trigger significant nonradiative recombination and limit the attainable device photovoltage. We then develop the energetic models that describe such buried heterointerfaces. Moreover, we further test the proposed model -derived mechanisms via inserting a thin polyvinyl alcohol layer into the buried heterointerfaces of the de-vices. We demonstrate that chemical interactions and formation of the perovskite transition phase at the buried heterointerface thereby are fully restrained, leading to a diminished electron extraction barrier and improved charge transport. As a result, significant increases in open-circuit voltage and fill factor of the devices are ach-ieved. These results will help guide future efforts on developing suitable buried heterointerfaces for superior performance of perovskite optoelectronics. | |
| 650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
| 653 | a Perovskite optoelectronic devices; Buried heterointerface; Energetics; Charge transport; Nonradiative recombination | |
| 700 | 1 | a Jiang, Shengu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Zhang, Yefanu Soochow Univ, Peoples R China4 aut |
| 700 | 1 | a Lv, Zhiweiu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Bai, Ruirongu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Yan, Yutingu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Zeng, Qiu Shanghai Univ Engn Sci, Peoples R China4 aut |
| 700 | 1 | a Xu, Xionghuu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Ding, Limingu Ctr Excellence Nanosci CAS, Peoples R China4 aut |
| 700 | 1 | a Wu, Yuningu East China Normal Univ, Peoples R China4 aut |
| 700 | 1 | a Liu, Xianjieu Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten4 aut0 (Swepub:liu)xiali21 |
| 700 | 1 | a Fahlman, Matsu Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten4 aut0 (Swepub:liu)matfa21 |
| 700 | 1 | a Bao, Qinyeu Fudan Univ, Peoples R China; East China Normal Univ, Peoples R China; Shanxi Univ, Peoples R China4 aut |
| 710 | 2 | a Fudan Univ, Peoples R China; East China Normal Univ, Peoples R Chinab East China Normal Univ, Peoples R China4 org |
| 773 | 0 | t Nano Energyd : ELSEVIERg 109q 109x 2211-2855x 2211-3282 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-192693 |
| 856 | 4 8 | u https://doi.org/10.1016/j.nanoen.2023.108281 |
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