Search: WFRF:(Xu Jie)
> (2005-2009) >
Gate-defined quantu...
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
-
- Sun, Jie (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
- Larsson, Marcus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
- Maximov, Ivan (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
show more...
-
Hardtdegen, Hilde (author)
-
- Xu, Hongqi (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
show less...
-
(creator_code:org_t)
- AIP Publishing, 2009
- 2009
- English.
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:4
- Related links:
-
http://dx.doi.org/10...
-
show more...
-
http://juser.fz-juel...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- quantum
- well devices
- semiconductor quantum dots
- quantum interference devices
- nanotechnology
- indium compounds
- III-V semiconductors
- high-k dielectric thin films
- hafnium compounds
- g-factor
- gallium arsenide
- atomic layer deposition
- Coulomb blockade
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database