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Sökning: (WFRF:(Fedorov O.)) > (2010-2014) > Nitrogen-Doped Grap...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02679naa a2200493 4500 | |
| 001 | oai:lup.lub.lu.se:f720bf9e-1b61-4364-bdb6-8ba5e73b3ea7 | |
| 003 | SwePub | |
| 008 | 160401s2011 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://lup.lub.lu.se/record/22792412 URI |
| 024 | 7 | a https://doi.org/10.1021/nl20310372 DOI |
| 040 | a (SwePub)lu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a art2 swepub-publicationtype |
| 072 | 7 | a ref2 swepub-contenttype |
| 100 | 1 | a Usachov, D.4 aut |
| 245 | 1 0 | a Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties |
| 264 | c 2011-11-16 | |
| 264 | 1 | b American Chemical Society (ACS),c 2011 |
| 520 | a A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Nanoteknikx Nanoteknik0 (SwePub)210012 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Nano-technologyx Nano-technology0 (SwePub)210012 hsv//eng |
| 653 | a Graphene | |
| 653 | a nitrogen doping | |
| 653 | a electronic structure | |
| 653 | a synthesis | |
| 653 | a triazine | |
| 653 | a ARPES | |
| 700 | 1 | a Vilkov, O.4 aut |
| 700 | 1 | a Grueneis, A.4 aut |
| 700 | 1 | a Haberer, D.4 aut |
| 700 | 1 | a Fedorov, A.4 aut |
| 700 | 1 | a Adamchuk, V. K.4 aut |
| 700 | 1 | a Preobrajenski, Alexeiu Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory4 aut0 (Swepub:lu)maxl-apr |
| 700 | 1 | a Dudin, P.4 aut |
| 700 | 1 | a Barinov, A.4 aut |
| 700 | 1 | a Oehzelt, M.4 aut |
| 700 | 1 | a Laubschat, C.4 aut |
| 700 | 1 | a Vyalikh, D. V.4 aut |
| 710 | 2 | a Lunds universitetb MAX IV-laboratoriet4 org |
| 773 | 0 | t Nano Lettersd : American Chemical Society (ACS)g 11:12, s. 5401-5407q 11:12<5401-5407x 1530-6992x 1530-6984 |
| 856 | 4 | u http://dx.doi.org/10.1021/nl2031037y FULLTEXT |
| 856 | 4 8 | u https://lup.lub.lu.se/record/2279241 |
| 856 | 4 8 | u https://doi.org/10.1021/nl2031037 |
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