L773:0038 1101 OR L773:1879 2405
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Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs
- Qin, Changliang (author)
- Wang, Guilei (author)
- Kolahdouz, M. (author)
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- Luo, Jun (author)
- Yin, Huaxing (author)
- Yang, Ping (author)
- Li, Junfeng (author)
- Zhu, Huilong (author)
- Chao, Zhao (author)
- Ye, Tianchun (author)
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- (creator_code:org_t)
- Elsevier, 2016
- 2016
- English.
- In: Solid-State Electronics. - : Elsevier. - 0038-1101 .- 1879-2405. ; 124, s. 10-15
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- A complete mapping of 14 nm FinFETs performance over 200 mm wafers was performed and the pattern dependency of SiGe selective growth was calculated using an empirical kinetic molecule model for the reactant precursors. The transistor structures were analyzed by conventional characterization tools and their performance was simulated by considering the process related variations. The applied model presents for the first time a powerful tool for transistor community to predict the SiGe profile and strain modulating over a processed wafer, independent of wafer size.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Pattern dependency
- SiGe
- EPI
- FinFET
- 14 nm
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Solid-State Electronics (Search for host publication in LIBRIS)
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- Qin, Changliang
- Wang, Guilei
- Kolahdouz, M.
- Luo, Jun
- Yin, Huaxing
- Yang, Ping
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- Li, Junfeng
- Zhu, Huilong
- Chao, Zhao
- Ye, Tianchun
- Radamson, Henry ...
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- ENGINEERING AND TECHNOLOGY
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- Royal Institute of Technology
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