High Zn content single-phase RS-MgZnO suitable for solar-blind frequency applications

Liang, H. L. (författare)

Mei, Z. X. (författare)

Liu, Z. L. (författare)

Guo, Y. (författare)

Azarov, A.Yu. (författare)

Kuznetsov, A.Yu. (författare)

Du, X. L. (författare)

(creator_code:org_t)

American Institute of Physics (AIP), 2010
2010
Engelska.
Ingår i: 2010 Wide Bandgap Cubic Semiconductors. - : American Institute of Physics (AIP). - 9780735408470 ; , s. 185-190

Relaterad länk:: https://urn.kb.se/re...; visa fler...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

Stäng

Single-phase rock-salt MgZnO films with high Zn content were successfully fabricated on the templates of MgO (111)/α-sapphire (0001) by radio-frequency plasma assisted molecular beam epitaxy. The influence of growth temperature on epitaxy of MgZnO alloy films was investigated by the combined studies of crystal structures, compositions, and optical properties. It is found that the incorporation of Zn atoms into the rock-salt MgZnO films is greatly enhanced at low temperature, confirmed by in-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction characterization. Zn fraction in the single-phase rock-salt Mg 0.53Zn0.47O film was determined by Rutherford backscattering spectrometry. Optical properties of the films were investigated by transmittance spectroscopy and reflectance spectroscopy, both of which demonstrate the solar-blind band gap and its dependence on Zn content.

Av författaren/redakt...: Liang, H. L.; Mei, Z. X.; Liu, Z. L.; Guo, Y.; Azarov, A.Yu.; Kuznetsov, A.Yu.; visa fler...; Hallén, Anders; Du, X. L.; visa färre...

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