WFRF:(Bengtsson Stefan 1961)
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Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
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- Amirfeiz, Petra, 1973 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sanz-Velasco, Anke, 1971 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- (creator_code:org_t)
- 2003
- 2003
- English.
- In: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Annealing
- Hydrophobicity
- Bonding
- Interfaces (materials)
- Interfacial energy
- Plasma applications
- Silicon wafers
- Hydrofluoric acid
Publication and Content Type
- kon (subject category)
- ref (subject category)
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