Sökning: WFRF:(Haralson Erik) > As- or P-doped Si l...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 02670naa a2200349 4500 | |
001 | oai:DiVA.org:kth-23235 | |
003 | SwePub | |
008 | 100810s2004 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-232352 URI |
024 | 7 | a https://doi.org/10.1088/0031-8949/2004/T114/0072 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Suvar, Erdalu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u1sxan4r |
245 | 1 0 | a As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs |
264 | 1 | c 2004 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 QC 20111031 | |
520 | a A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
653 | a chemical-vapor-deposition | |
700 | 1 | a Haralson, Eriku KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u1bz5891 |
700 | 1 | a Hållstedt, Juliusu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u15ztfu4 |
700 | 1 | a Radamson, Henry H.u KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u1g2cqgr |
700 | 1 | a Östling, Mikaelu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u1u0kle4 |
710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
773 | 0 | t Physica Scriptag T114, s. 34-36q T114<34-36x 0031-8949x 1402-4896 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-23235 |
856 | 4 8 | u https://doi.org/10.1088/0031-8949/2004/T114/007 |
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