Sökning: WFRF:(Islam J. Y.)
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Thermal conductivit...
Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers
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- Tran, Dat (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,C3NiT-Janzen
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- Delgado Carrascon, Rosalia (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,C3NiT-Janzen
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- Iwaya, Motoaki (författare)
- Meijo Univ, Japan,Meijo University
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- Monemar, Bo (författare)
- Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,C3NiT-Janzen,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH
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- Darakchieva, Vanya (författare)
- Linköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,C3NiT-Janzen; TheMAC,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH
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- Paskov, Plamen (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,C3NiT-Janzen
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(creator_code:org_t)
- American Physical Society, 2022
- 2022
- Engelska.
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Ingår i: Physical Review Materials. - : American Physical Society. - 2475-9953. ; 6:10
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://dx.doi.org/10... (free)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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Abstract
Ämnesord
Stäng
- AlxGa1-xN ternary alloys are emerging ultrawide band gap semiconductor materials for high-power electronics applications. The heat dissipation, which mainly depends on the thermal conductivity of the constituent material in the device structures, is the key for device performance and reliability. However, the reports on the thermal conductivity of AlxGa1-xN alloys are very limited. Here, we present a comprehensive study of the thermal conductivity of AlxGa1-xN in the entire Al composition range. Thick AlxGa1-xN layers grown by metal-organic chemical vapor deposition on GaN/sapphire and GaN/SiC templates are examined. The thermal conductivity measurements are done by the transient thermoreflectance method at room temperature. The effects of the Al composition, dislocation density, Si doping, and layer thickness on the thermal conductivity of AlxGa1-xN layers are thoroughly investigated. All experimental data are fitted by the modified Callaway model within the virtual crystal approximation, and the interplay between the different phonon scattering mechanisms is analyzed and discussed.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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