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Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films

Höglund, Carina (author)
Linköping University,Lund University,Lunds universitet,Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan,European Spallat Source ESS AB, Lund, Sweden,European Spallation Source ESS AB,Stiftelser och övriga anknutna verksamheter,Other Institutions and Utilities
Alling, Björn (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Max Planck Institute Eisenforsch GmbH, Germany,Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, Linkoping, Sweden
Jensen, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, Linkoping, Sweden
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Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, Linkoping, Sweden
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Hall-Wilton, Richard (author)
Mittuniversitetet,Mid Sweden University,Lund University,Lunds universitet,European Spallation Source ESS AB,Stiftelser och övriga anknutna verksamheter,Other Institutions and Utilities,Avdelningen för elektronikkonstruktion,European Spallat Source ESS AB, Lund, Sweden,European Spallat Source ESS AB, Sweden; Mid Sweden University, Sweden
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 (creator_code:org_t)
American Institute of Physics (AIP), 2015
2015
English.
In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 117:19
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)
NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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