Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity

Arnaudov, B (författare)

Paskova, Tanja (författare): Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi

Evtimova, S (författare)

Valcheva, E (författare)

Heuken, M (författare)

Monemar, Bo (författare): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

(creator_code:org_t)

2003
2003
Engelska.
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:4

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Abstract Ämnesord

Stäng

We present a multilayer model for analysis of Hall effect data of semiconductor structures composed of sublayers with different thicknesses and contacts placed on the top surface. Based on the circuit theory we analyze the contributions of the conductivity of every sublayer and derive general expressions for the conductivity and carrier mobility of a multilayer planar sample. The circuit analysis is performed taking into account the fact that the sample sublayers are partially connected in parallel to each other by series resistances formed in areas lying below the contacts from each upper layer. In order to solve the inverse problem of determining the electrical parameters of one of the sublayers, a procedure for analysis of the Hall effect data is proposed. The model is simplified for a structure composed of two layers with the same type of conductivity, and is used to determine the electrical parameters of GaN films grown on relatively thick GaN buffers.

Av författaren/redakt...: Arnaudov, B; Paskova, Tanja; Evtimova, S; Valcheva, E; Heuken, M; Monemar, Bo

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