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Mg-doping and free-...
Mg-doping and free-hole properties of hot-wall MOCVD GaN
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- Papamichail, Alexis (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Kakanakova-Gueorguieva, Anelia (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Sveinbjörnsson, Einar (författare)
- Linköpings universitet,Linköping University,University of Iceland,Halvledarmaterial,Tekniska fakulteten,Univ Iceland, Iceland,Centre for III-nitride technology (C3NiT)
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- Persson, Axel (författare)
- Linköpings universitet,Linköping University,Tunnfilmsfysik,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Hult, Björn, 1993 (författare)
- Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Rorsman, Niklas, 1964 (författare)
- Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Stanishev, Vallery (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Terahertz Materials Analysis Center - THeMAC
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- Le, Son Phuong (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Persson, Per O.Å. (författare)
- Linköpings universitet,Linköping University
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- Nawaz, M. (författare)
- Hitachi, Ltd.,Hitachi Energy Sweden AB
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- Chen, Jr-Tai (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,SweGaN AB, Olaus Magnus vag 48A, SE-58330 Linkoping, Sweden,Centre for III-nitride technology (C3NiT)
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- Paskov, Plamen (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Darakchieva, V. (författare)
- Linköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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(creator_code:org_t)
- AIP Publishing, 2022
- 2022
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 131:18
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http://dx.doi.org/10... (free)
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 ω cm and 8.4 × 10 17 cm - 3, respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures.
Ämnesord
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Papamichail, Ale ...
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Kakanakova-Gueor ...
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Sveinbjörnsson, ...
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Persson, Axel
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Hult, Björn, 199 ...
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Rorsman, Niklas, ...
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visa fler...
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Stanishev, Valle ...
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Le, Son Phuong
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Persson, Per O.Å ...
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Nawaz, M.
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Chen, Jr-Tai
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Paskov, Plamen
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Darakchieva, V.
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Oorganisk kemi
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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NATURVETENSKAP
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Chalmers tekniska högskola
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Lunds universitet
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