An Intermediate Frequency Amplifier for High-Temperature Applications

• This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-silicon carbide (4H-SiC) bipolar junction transistors (BJTs)

high temperature

intermediate frequency (IF) amplifiers

matching networks

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)