Silicon-Integrated 850-nm Hybrid-Cavity VCSEL

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Fältnamn	Indikatorer	Metadata
000		03443naa a2200373 4500
001		oai:research.chalmers.se:a2e8a09d-871b-47bd-9779-4d9ef66657a1
003		SwePub
008		171008s2015 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://research.chalmers.se/publication/2288902 URI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a kon2 swepub-publicationtype
072	7	a vet2 swepub-contenttype
100	1	a Haglund, Emanuel,d 1988u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)emaand
245	1 0	a Silicon-Integrated 850-nm Hybrid-Cavity VCSEL
264	1	c 2015
338		a electronic2 rdacarrier
520		a Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Telekommunikation0 (SwePub)202042 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Telecommunications0 (SwePub)202042 hsv//eng
653		a Semiconductor lasers
653		a vertical-cavity surface-emitting laser (VCSEL)
653		a silicon photonics
700	1	a Kumari, Sulakshna4 aut
700	1	a Westbergh, Petter,d 1981u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)petwes
700	1	a Gustavsson, Johan,d 1974u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)johangus
700	1	a Roelkens, Gunther4 aut
700	1	a Baets, Roel G.4 aut
700	1	a Larsson, Anders,d 1957u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)andersla
710	2	a Chalmers tekniska högskola4 org
773	0	t Optics and Photonics in Sweden, 28-29 Oct. 2015
856	4	u http://publications.lib.chalmers.se/records/fulltext/228890/local_228890.pdfx primaryx freey FULLTEXT
856	4 8	u https://research.chalmers.se/publication/228890

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