Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

Dislocation-induced spatial ordering of InAs quantum dots : Effects on optical properties

Leon, Rosa (author)

Chaparro, S. (author)

Johnson, S.R. (author)

Navarro, C. (author)

Jin, X. (author)

Zhang, Y.H. (author)

Marcinkevicius, Saulius (author): KTH,Mikroelektronik och informationsteknik, IMIT

(creator_code:org_t)

AIP Publishing, 2002
2002
English.
In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:9, s. 5826-5830

Related links:: https://espace.libra...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.

By the author/editor: Leon, Rosa; Chaparro, S.; Johnson, S.R.; Navarro, C.; Jin, X.; Zhang, Y.H.; show more...; Siegert, Jörg; Marcinkevicius, ...; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Atom and Molecul ...

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