WFRF:(Nava A.)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03847naa a2200349 4500 | |
| 001 | oai:DiVA.org:liu-45444 | |
| 003 | SwePub | |
| 008 | 091011s2005 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-454442 URI |
| 024 | 7 | a https://doi.org/10.1063/1.19062942 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Schifano, R.4 aut |
| 245 | 1 0 | a Electrical and optical characterization of 4H-SiC diodes for particle detection |
| 264 | 1 | b AIP Publishing,c 2005 |
| 338 | a print2 rdacarrier | |
| 520 | a The electronic and optical properties of several (medium to high quality) 4H-SiC epitaxial sensors for particle detection have been studied. The samples are n -doped Schottky diodes with different nitrogen concentrations (6× 1013 cm-3 -5× 1015 cm-3) and thicknesses (20-40 µm). A full electrical and optical characterization has been performed by capacitance versus voltage measurements and near-band-edge low-temperature photoluminescence. The effective doping along the epilayer and the depletion width have been determined and data are consistent with the charge collection efficiency characterization performed with a minimum ionizing ? -source. All the investigated samples exhibit a 100% collection efficiency. In particular, the best samples yield a highly reproducible signal, well separated from the pedestal. Photoluminescence results show a linear relationship between the effective doping and the ratio of nitrogen-bound excitonic emission (Q0) and free excitonic line (I76), in agreement with a previous work on 4H-SiC with a higher doping concentration [I. G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzn, J. Appl. Phys. 80, 3504 (1996)]. Moreover we show that the dependence of the major spectral features as a function of the penetration depth of the exciting laser beam can quantitatively provide information on substrate contribution to the photoluminescence. In conclusion, we bring evidence that a detailed characterization of SiC-based detectors, by all optical techniques, yields an accurate value for the net doping and gives a qualitative information on the epilayer thickness prior to any electrical wafer tests. © 2005 American Institute of Physics. | |
| 653 | a TECHNOLOGY | |
| 653 | a TEKNIKVETENSKAP | |
| 700 | 1 | a Vinattieri, A.u Department of Physics, University of Florence, Via Sansone 1, I-50019 Sesto Fiorentino, Italy4 aut |
| 700 | 1 | a Bruzzi, M.u Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy4 aut |
| 700 | 1 | a Miglio, S.u Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy4 aut |
| 700 | 1 | a Lagomarsino, S.u Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy4 aut |
| 700 | 1 | a Sciortino, S.u Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy4 aut |
| 700 | 1 | a Nava, F.u Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena, Italy4 aut |
| 710 | 2 | a Department of Physics, University of Florence, Via Sansone 1, I-50019 Sesto Fiorentino, Italyb Department of Energetics, Istituto Nazionale di Física Nucleare (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence, Italy4 org |
| 773 | 0 | t Journal of Applied Physicsd : AIP Publishingg 97:10, s. 103539-q 97:10<103539-x 0021-8979x 1089-7550 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-45444 |
| 856 | 4 8 | u https://doi.org/10.1063/1.1906294 |
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