Low-frequency noise characterization in ultra-low equivalent-oxide-thickness thulium silicate interfacial layer nMOSFETs

QC 20151130
Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3nm EOT interfacial layer (TmSiO) and two different bulk high-k dielectrics (Tm2O3 and HfO2). The MOSFETs were fabricated in a gate-last process and the total gate stack EOT was 1.2 nm and 0.65 nm for the Tm2O3 and HfO2 samples respectively. In general both gate stacks resulted in 1/f type of noise spectra and noise levels comparable to conventional SiO2/HfO2 devices with similar EOTs. The extracted average effective oxide trap density was 2.5×1017 cm-3eV-1 and 1.5×1017 cm-3eV-1 for TmSiO/HfO2 and TmSiO/Tm2O3 respectively. Therefore the best noise performance was observed for the gate stack with Tm2O3 bulk high-k layer and we suggest that the interface free single layer ALD fabrication scheme could explain this.

Dentoni Litta, EugenioKTH,Integrerade komponenter och kretsar(Swepub:kth)u1g6peuu (author)
Hellström, Per-ErikKTH,Integrerade komponenter och kretsar(Swepub:kth)u1wc1lgb (author)
Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
Malm, Bengt GunnarKTH,Integrerade komponenter och kretsar(Swepub:kth)u13lag9j (author)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

In:IEEE Electron Device Letters: IEEE Press36:12, s. 1355-13580741-31061558-0563

By the author/editor: Olyaei, Maryam; Dentoni Litta, E ...; Hellström, Per-E ...; Östling, Mikael; Malm, Bengt Gunn ...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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