Silicon-integrated short-wavelength hybrid-cavity VCSEL

Haglund, Emanuel,1988Chalmers tekniska högskola,Chalmers University of Technology (author)

We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

Kumari, SulakshnaUniversiteit Gent,Ghent university (author)
Westbergh, Petter,1981Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)petwes (author)
Gustavsson, Johan,1974Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)johangus (author)
Roelkens, GuntherUniversiteit Gent,Ghent university (author)
Baets, Roel G.Universiteit Gent,Ghent university (author)
Larsson, Anders,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andersla (author)
Chalmers tekniska högskolaUniversiteit Gent (creator_code:org_t)

By the author/editor: Haglund, Emanuel ...; Kumari, Sulakshn ...; Westbergh, Pette ...; Gustavsson, Joha ...; Roelkens, Gunthe ...; Baets, Roel G.; show more...; Larsson, Anders, ...; show less...

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