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Diffusion of phosphorus in strained Si/SiGe/Si heterostructures

Kuznetsov, A.Yu. (author)
Christensen, J. S. (author)
Linnarsson, M. K. (author)
KTH,Skolan för informations- och kommunikationsteknik (ICT)
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Svensson, B. G. (author)
Radamson, H. H. (author)
Grahn, J. (author)
Landgren, G. (author)
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 (creator_code:org_t)
San Francisco, CA, USA, 1999
1999
English.
In: Materials Research Society Symposium - Proceedings. - San Francisco, CA, USA. ; 568:Warrendale, PA, United States, s. 271-276
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810-900 °C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Diffusion in solids
Oxidation
Phosphorus
Semiconducting boron
Semiconducting films
Semiconducting silicon
Semiconducting silicon compounds
Interstitial fraction
Pairing-controlled mechanisms
Heterojunctions

Publication and Content Type

ref (subject category)
art (subject category)

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