Sökning: WFRF:(Chesnokov Yu. A.) > Low-energy-channeli...
Fältnamn | Indikatorer | Metadata |
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000 | 02817naa a2200457 4500 | |
001 | oai:DiVA.org:ltu-10326 | |
003 | SwePub | |
008 | 160929s2005 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-103262 URI |
024 | 7 | a https://doi.org/10.1063/1.20331272 DOI |
040 | a (SwePub)ltu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Baricordi, S.4 aut |
245 | 1 0 | a Low-energy-channeling surface analysis on silicon crystals designed for high-energy-channeling in accelerators |
264 | 1 | b AIP Publishing,c 2005 |
338 | a print2 rdacarrier | |
500 | a Upprättat; 2005; 20141216 (albvom) | |
520 | a Channeling of relativistic particles in bent Si crystals is a powerful technique for use with accelerators. Its efficiency can be found to be highly dependent on the state of the surface of the crystal steering the particles. We investigated the morphology and structure of the surface of the samples that have been used with high efficiency for channeling in accelerators. Low-energy channeling of 2 MeVα particles or protons was used as a probe. We found that mechanical treatment of the samples leads to a superficial damaged layer, which is correlated to efficiency limitations of the crystal in accelerators. In contrast, chemical etching, which was used to treat the surface of the most efficient crystals, leaves a surface with superior perfection. © 2005 American Institute of Physics. | |
650 | 7 | a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng |
653 | a Experimentell fysik | |
653 | a Experimental Physics | |
700 | 1 | a Biryukov, V. M.u Institute for High Energy Physics4 aut |
700 | 1 | a Carnera, A.4 aut |
700 | 1 | a Chesnokov, Yu A.u Institute for High Energy Physics4 aut |
700 | 1 | a Della Mea, G.u University of Trento, Department of Materials Engineering and Industrial Technologies4 aut |
700 | 1 | a Guidi, V.4 aut |
700 | 1 | a Ivanov, Yu M.u Petersburg Institute for Nuclear Physics4 aut |
700 | 1 | a Martinelli, G.4 aut |
700 | 1 | a Milan, E.4 aut |
700 | 1 | a Restello, S.u INFN4 aut |
700 | 1 | a Sambo, A.4 aut |
700 | 1 | a Scandale, W.u CERN4 aut |
700 | 1 | a Vomiero, Albertou Department of Physics, University of Padova4 aut0 (Swepub:ltu)albvom |
710 | 2 | a Institute for High Energy Physicsb University of Trento, Department of Materials Engineering and Industrial Technologies4 org |
773 | 0 | t Applied Physics Lettersd : AIP Publishingg 87:9q 87:9x 0003-6951x 1077-3118 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-10326 |
856 | 4 8 | u https://doi.org/10.1063/1.2033127 |
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