Graphene FET on Diamond for High-Frequency Electronics

Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high charge-carrier mobility and saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what can be achieved with III-V-based semiconductors. However, the progress of high-speed graphene transistors has been hampered by fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report on the improved performance of graphene field-effect transistors (GFETs) obtained by using a diamond substrate. An extrinsic maximum frequency of oscillation fmax of up to 54 GHz was obtained for a gate length of 500 nm. Furthermore, the high thermal conductivity of diamond provides an efficient heat-sink, and the relatively high optical phonon energy of diamond contributes to an increased charge-carrier saturation velocity in the graphene channel. Moreover, we show that GFETs on diamond exhibit excellent scaling behavior for different gate lengths. These results promise that the GFET-on-diamond technology has the potential of reaching sub-terahertz frequency performance.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Graphene
Diamond
field-effect transistors
GFET
MOGFET
optical phonons
saturation velocity
Engineering Science with specialization in Science of Electricity
Teknisk fysik med inriktning mot elektricitetslära

Majdi, Saman,1977-Uppsala universitet,Elektricitetslära,Diamond Electronics(Swepub:uu)samma947 (författare)
Vorobiev, A. (författare)
Jeppson, K. (författare)
Isberg, Jan,1964-Uppsala universitet,Elektricitetslära(Swepub:uu)jaisb133 (författare)
Stake, J. (författare)
Uppsala universitetElektricitetslära (creator_code:org_t)

Ingår i:IEEE Electron Device Letters: Institute of Electrical and Electronics Engineers (IEEE)43:2, s. 300-3030741-31061558-0563

Av författaren/redakt...: Asad, M.; Majdi, Saman, 19 ...; Vorobiev, A.; Jeppson, K.; Isberg, Jan, 196 ...; Stake, J.

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