L773:0013 5194 OR L773:1350 911X
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Direct experimental verification of shot noise in short channel MOS transistors
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- Andersson, Stefan, 1975- (author)
- Linköpings universitet,Tekniska högskolan,Elektroniska komponenter
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- Svensson, Christer, 1941- (author)
- Linköpings universitet,Tekniska högskolan,Elektroniska komponenter
- (creator_code:org_t)
- Institution of Engineering and Technology (IET), 2005
- 2005
- English.
- In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:15, s. 869-871
- Journal article (peer-reviewed)
Abstract
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- Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 urn process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al. © IEE 2005.
Keyword
- experimental verification
- shot noise
- short channel MOS
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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