L773:0015 0193 OR L773:1563 5112
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02713naa a2200361 4500 | |
| 001 | oai:research.chalmers.se:5c6336cc-4d92-4f97-8cec-cd713537e2d2 | |
| 003 | SwePub | |
| 008 | 171007s2001 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://research.chalmers.se/publication/2123652 URI |
| 024 | 7 | a https://doi.org/10.1080/001501901082251952 DOI |
| 040 | a (SwePub)cth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a art2 swepub-publicationtype |
| 072 | 7 | a ref2 swepub-contenttype |
| 100 | 1 | a Abadei, Saeed,d 1961u Chalmers tekniska högskola,Chalmers University of Technology4 aut |
| 245 | 1 0 | a Low frequency characterisation of laser ablation deposited thin Na0.5K0.5NbO3 (NKN) films for microwave application |
| 264 | 1 | b Informa UK Limited,c 2001 |
| 520 | a Experimental results on three types of Na0.5K0.5NbO3 (NKN) film capacitor structures are presented. The epitaxial NKN thin films have been deposited on (100) Si (high resistivity), SiO2/Si (low resistivity) and Pt/Si (low resistivity) substrates using laser ablation deposition. Both straight slot and interdigital electrode have been deposited on top of the NKN films. The leakage current and low frequency dielectric properties (I-V, C-V, tanδ-V) of the structures have been measured at 1 MHz as a function of electric field at room temperature. In all three types of capacitor structures the leakage currents in a-b plane are very small, while along c-axis there are extremely large leakage currents. On low resistivity silicon substrates the tunability of the dielectric permittivity is about 12% and loss tangent is low also. On high resistivity (ρ>10 kOhm cm) silicon substrate the tunability at 1 MHz is extremely high, about 10 times, and the losses are also high. On the other hand at microwave frequencies the losses are small (tanδ | |
| 650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
| 653 | a microwave | |
| 653 | a varactor | |
| 653 | a ferroelectric | |
| 653 | a tunable device | |
| 700 | 1 | a Cho, C4 aut |
| 700 | 1 | a Grishin, Alex4 aut |
| 700 | 1 | a Gevorgian, Spartak,d 1948u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)spartak |
| 710 | 2 | a Chalmers tekniska högskola4 org |
| 773 | 0 | t Integrated Ferroelectricsd : Informa UK Limitedg 263:1, s. 173-179q 263:1<173-179x 1058-4587x 1607-8489 |
| 773 | 0 | t Ferroelectricsd : Informa UK Limitedg 263:1, s. 173-179q 263:1<173-179x 0015-0193x 1563-5112 |
| 856 | 4 8 | u https://research.chalmers.se/publication/212365 |
| 856 | 4 8 | u https://doi.org/10.1080/00150190108225195 |
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