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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003478naa a2200481 4500
001oai:DiVA.org:liu-128854
003SwePub
008160602s2011 | |||||||||||000 ||eng|
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1288542 URI
0247 a https://doi.org/10.4028/www.scientific.net/MSF.679-680.2412 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a kon2 swepub-publicationtype
1001 a Marinova, Mayau Thessaloniki , Greece4 aut
2451 0a Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
264 1c 2011
338 a print2 rdacarrier
520 a The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653 a 3C-SiC
653 a LTPL
653 a Post-Growth Annealing
653 a VLS
653 a TEM
653 a Defect
7001 a Andreadou, A.u Thessaloniki , Greece4 aut
7001 a Sun, JianWuu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut0 (Swepub:liu)jiasu75
7001 a Lorenzzi, J.u Villeurbanne; France4 aut
7001 a Mantzari, A.u Thessaloniki , Greece4 aut
7001 a Zoulis, Georgiosu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut
7001 a Jegenyes, Nikolettau Villeurbanne; France4 aut
7001 a Juillaguet, Sandrineu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut
7001 a Soulière, Veroniqueu Villeurbanne; France4 aut
7001 a Ferro, G.u Villeurbanne; France4 aut
7001 a Camassel, Jeanu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut
7001 a Polychroniadis, Efstathios K.u Thessaloniki , Greece4 aut
7102 a Thessaloniki , Greeceb Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 org
7730 t Silicon Carbide and Related Materials 2010g , s. 241-244q <241-244
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128854
8564 8u https://doi.org/10.4028/www.scientific.net/MSF.679-680.241

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