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WFRF:(Baranowski M)
 

Sökning: WFRF:(Baranowski M) > (2010-2014) > Contactless Electro...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003300naa a2200361 4500
001oai:research.chalmers.se:bb3c57c2-9a48-40f7-a0b1-4ff7c5093ddc
003SwePub
008171007s2011 | |||||||||||000 ||eng|
0247 a https://research.chalmers.se/publication/1383882 URI
0247 a https://doi.org/10.1088/0268-1242/26/4/0450122 DOI
040 a (SwePub)cth
041 a engb eng
042 9 SwePub
072 7a art2 swepub-publicationtype
072 7a ref2 swepub-contenttype
1001 a Baranowski, Mu Politechnika Wrocławska,Wrocław University of Science and Technology4 aut
2451 0a Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation
264 c 2011-02-25
264 1b IOP Publishing,c 2011
520 a The optical properties of GaInNAs quantum wells (QW) grown by molecular beam epitaxywith and without N-irradiation (i.e. grown by the classical method) were investigated by thecontactless electroreflectance (CER), temperature-dependent photoluminescence (PL) andtime-resolved PL (TRPL). From CER measurements it was concluded that one type ofnitrogen nearest-neighbor environment (In-rich environment) is dominant for GaInNAs QWsgrown with N-irradiation whereas various nitrogen environments are present for the referenceGaInNAs QW (i.e. the sample obtained by the classical method). PL and TRPL measurementsclearly show that the optical properties of GaInNAs QWs are affected mainly by the amount ofthe incorporated nitride atoms. It was observed that the PL decay time decreased from ∼200to ∼40 ps when the nitrogen concentration is increased from 0.8 to 2.2%. In addition, thepresence of As flux during N-irradiation reduces the amount of the incorporated nitrogen andsimultaneously improves the optical quality of GaInNAs QWs (i.e. it weakens the carrierlocalization at low temperatures and improves the quantum efficiency of PL).
650 7a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng
7001 a Kudrawiec, Ru Politechnika Wrocławska,Wrocław University of Science and Technology4 aut
7001 a Syperek, Mu Politechnika Wrocławska,Wrocław University of Science and Technology4 aut
7001 a Misiewicz, Ju Politechnika Wrocławska,Wrocław University of Science and Technology4 aut
7001 a Zhao Ternehäll, Huan,d 1982u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)huanz
7001 a Sadeghi, Mahdad,d 1964u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)mahdad
7001 a Wang, Shu Min,d 1963u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)shumin
7102 a Politechnika Wrocławskab Chalmers tekniska högskola4 org
7730 t Semiconductor Science and Technologyd : IOP Publishingg 26:4, s. 045012-q 26:4<045012-x 1361-6641x 0268-1242
8564 u http://dx.doi.org/10.1088/0268-1242/26/4/045012y FULLTEXT
8564 8u https://research.chalmers.se/publication/138388
8564 8u https://doi.org/10.1088/0268-1242/26/4/045012

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