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Addressing the impa...
Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances using SCAPS 1-D model
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- Kotipalli, Ratan (author)
- ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium
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- Poncelet, Olivier (author)
- ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium
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- Li, Guoli (author)
- ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium ; School of Physics and Electronics, Hunan University, Changsha 410082, China
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- Zeng, Yun (author)
- School of Physics and Electronics, Hunan University, Changsha 410082, China
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- Francis, L.A. (author)
- ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium
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- Vermang, Bart (author)
- Faculty of Engineering Technology, University of Hasselt, Hasselt 3500, Belgium ; IMEC, Kapeldreef 75, Leuven 3001, Belgium
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- Flandre, Denis (author)
- ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium
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(creator_code:org_t)
- Elsevier, 2017
- 2017
- English.
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In: Solar Energy. - : Elsevier. - 0038-092X .- 1471-1257. ; 157, s. 603-613
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Abstract
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- We present a (1-D) SCAPS device model to address the following: (i) the surface passivation mechanisms (i.e.field-effect and chemical), (ii) their impact on the CIGS solar cell performance for varying CIGS absorberthickness, (iii) the importance of fixed charge type (+/−) and densities of fixed and interface trap charges, and(iv) the reasons for discrete gains in the experimental cell efficiencies (previously reported) for varying CIGSabsorber thickness. First, to obtain a reliable device model, the proposed set of parameters is validated for bothfield-effect (due to fixed charges) and chemical passivation (due to interface traps) using a simple M-I-S teststructure and experimentally extracted values (previously reported) into the SCAPS simulator. Next, we providefigures of merits without any significant loss in the solar cell performances for minimum net −Qf and maximumacceptable limit for Dit, found to be ∼5 × 1012 cm−2 and ∼1 × 1013 cm−2 eV−1 respectively. We next showthat the influence of negative fixed charges in the rear passivation layer (i.e. field-effect passivation) is morepredominant than that of the positive fixed charges (i.e. counter-field effect) especially while considering ultrathin(<0.5 μm) absorber layers. Furthermore, we show the importance of rear reflectance on the short-circuitphotocurrent densities while scaling down the CIGS absorber layers below 0.5 μm under interface chemical andfield-effect passivation mechanisms. Finally, we provide the optimal rear passivation layer parameters for efficienciesgreater than 20% with ultra-thin CIGS absorber thickness (<0.5 μm). Based on these simulation results,we confirm that a negatively charged rear surface passivation with nano-point contact approach is efficient forthe enhancement of cell performances, especially while scaling down the absorber thickness below 0.5 μm.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Physics with specialization in Global Energy Resources
- Fysik med inriktning mot globala energiresurser
Publication and Content Type
- ref (subject category)
- art (subject category)
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