Grazing incident asymmetric X-ray diffraction of beta-FeSi2 layers, produced by ion beam synthesis

Atanassov, A (författare)

Baleva, M (författare)

Darakchieva, Vanya (författare): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Goranova, E (författare)

(creator_code:org_t)

Elsevier BV, 2004
2004
Engelska.
Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 76:02-Mar, s. 277-280

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Abstract Ämnesord

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The crystal structure of beta-FeSi2 phase, prepared by ion beam synthesis (IBS) method, followed by rapid thermal annealing (RTA) is investigated by grazing incident asymmetric X-ray diffraction (GIAXRD). The X-ray spectra, obtained at different grazing angles, indicated that the beta-FeSi2 phase is formed in the whole implantation range. From the comparison of the reflections intensities ratios, it is found that in the metal-deficient regions, where the beta-FeSi2 phase is present in the form of precipitates, the crystallites orientation is influenced by the one of the silicon substrates, while the orientation in the metal-rich region is different and depends on the annealing temperature. (C) 2004 Elsevier Ltd. All rights reserved.

Av författaren/redakt...: Atanassov, A; Baleva, M; Darakchieva, Van ...; Goranova, E

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