Protective capping and surface passivation of III-V nanowires by atomic layer deposition

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Fältnamn	Indikatorer	Metadata
000		02877naa a2200421 4500
001		oai:DiVA.org:kth-183209
003		SwePub
008		160303s2016 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1832092 URI
024	7	a https://doi.org/10.1063/1.49410632 DOI
040		a (SwePub)kth
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Dhaka, Veer4 aut
245	1 0	a Protective capping and surface passivation of III-V nanowires by atomic layer deposition
264	1	b American Institute of Physics (AIP),c 2016
338		a print2 rdacarrier
500		a QC 20160303
520		a Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2 angstrom) film. For InP NWs, the best passivation (similar to 2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.
650	7	a TEKNIK OCH TEKNOLOGIERx Nanoteknik0 (SwePub)2102 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Nano-technology0 (SwePub)2102 hsv//eng
700	1	a Perros, Alexander4 aut
700	1	a Naureen, Shagufta4 aut
700	1	a Shahid, Naeem4 aut
700	1	a Jiang, Hua4 aut
700	1	a Kakko, Joona-Pekko4 aut
700	1	a Haggren, Tuomas4 aut
700	1	a Kauppinen, Esko4 aut
700	1	a Srinivasan, Anandu KTH,Halvledarmaterial, HMA4 aut0 (Swepub:kth)u16fqvka
700	1	a Lipsanen, Harri4 aut
710	2	a KTHb Halvledarmaterial, HMA4 org
773	0	t AIP Advancesd : American Institute of Physics (AIP)g 6:1q 6:1x 2158-3226
856	4	u https://doi.org/10.1063/1.4941063y Fulltext
856	4	u https://aip.scitation.org/doi/pdf/10.1063/1.4941063
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-183209
856	4 8	u https://doi.org/10.1063/1.4941063

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Av författaren/redakt...: Dhaka, Veer; Perros, Alexande ...; Naureen, Shaguft ...; Shahid, Naeem; Jiang, Hua; Kakko, Joona-Pek ...; visa fler...; Haggren, Tuomas; Kauppinen, Esko; Srinivasan, Anan ...; Lipsanen, Harri; visa färre...

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