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FältnamnIndikatorerMetadata
00007176naa a2200721 4500
001oai:DiVA.org:ltu-81359
003SwePub
008201110s2020 | |||||||||||000 ||eng|
009oai:DiVA.org:lnu-108516
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-813592 URI
0247 a https://doi.org/10.1021/acsmaterialslett.0c002542 DOI
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-1085162 URI
040 a (SwePub)ltud (SwePub)lnu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
1001 a Yang, Chih-Wenu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia4 aut
2451 0a Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions
264 c 2020-09-14
264 1b American Chemical Society (ACS),c 2020
338 a print2 rdacarrier
500 a Validerad;2020;Nivå 2;2020-11-10 (johcin)
520 a Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (ÎŒXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions. © 2020 American Chemical Society.
650 7a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng
653 a Alignment
653 a Density functional theory
653 a Electric field effects
653 a Electronic properties
653 a Field effect transistors
653 a Heterojunctions
653 a High resolution transmission electron microscopy
653 a Scanning electron microscopy
653 a Transition metals
653 a Van der Waals forces
653 a X ray photoelectron spectroscopy
653 a Cross-sectional scanning
653 a Electrical characteristic
653 a Electronic/photonic devices
653 a Interlayer coupling
653 a Time reversal symmetries
653 a Transition metal dichalcogenides
653 a Two Dimensional (2 D)
653 a Vertical stacking
653 a Bismuth compounds
653 a Applied Physics
653 a Tillämpad fysik
7001 a Tang, Hao-Lingu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA4 aut
7001 a Sattar, Shahidu Luleå tekniska universitet,Materialvetenskap,Luleå University of Technology, Sweden4 aut0 (Swepub:ltu)shasat
7001 a Chiu, Ming-Huiu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA4 aut
7001 a Wan, Yiu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia4 aut
7001 a Chen, Chia-Haou National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan4 aut
7001 a Kong, Jingu Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,Massachusetts Institute of Technology, USA,Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan4 aut
7001 a Huang, Kuo-Weiu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia4 aut
7001 a Li, Lain-Jongu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan4 aut
7001 a Tung, Vincentu Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia4 aut
7102 a Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabiab Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States4 org
7730 t ACS Materials Lettersd : American Chemical Society (ACS)g 2:10, s. 1351-1359q 2:10<1351-1359x 2639-4979
8564 u https://repository.kaust.edu.sa/bitstream/10754/665857/1/Final%20Revised%20Manuscript_Bi2Te3-WSe2.pdf
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-81359
8564 8u https://doi.org/10.1021/acsmaterialslett.0c00254
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-108516

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