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Ceramic Additive Manufacturing Potential for Power Electronics Packaging

Akbari, Saeed (författare)
RISE,Smart hårdvara
Kostov, Konstantin Stoychev (författare)
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Brinkfeldt, Klas (författare)
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Adolfsson, Erik (författare)
RISE,Tillverkningsprocesser
Lim, Jang-Kwon (författare)
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Andersson, Dag (författare)
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Bakowski, Mietek (författare)
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Wang, Qin (författare)
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Salter, Michael (författare)
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers Inc. 2022
2022
Engelska.
Ingår i: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 2156-3950 .- 2156-3985. ; 12:11, s. 1857-1866
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • Compared with silicon-based power devices, wide band gap (WBG) semiconductor devices operate at significantly higher power densities required in applications such as electric vehicles and more electric airplanes. This necessitates development of power electronics packages with enhanced thermal characteristics that fulfil the electrical insulation requirements. The present research investigates the feasibility of using ceramic additive manufacturing (AM), also known as three-dimensional (3D) printing, to address thermal and electrical requirements in packaging gallium nitride (GaN) based high-electron-mobility transistors (HEMTs). The goal is to exploit design freedom and manufacturing flexibility provided by ceramic AM to fabricate power device packages with a lower junction-to-ambient thermal resistance (RθJA). Ceramic AM also enables incorporation of intricate 3D features into the package structure in order to control the isolation distance between the package source and drain contact pads. Moreover, AM allows to fabricate different parts of the packaging assembly as a single structure to avoid high thermal resistance interfaces. For example, the ceramic package and the ceramic heatsink can be printed as a single part without any bonding layer. Thermal simulations under different thermal loading and cooling conditions show the improvement of thermal performance of the package fabricated by ceramic AM. If assisted by an efficient cooling strategy, the proposed package has the potential to reduce RθJA by up to 48%. The results of the preliminary efforts to fabricate the ceramic package by AM are presented, and the challenges that have to be overcome for further development of this manufacturing method are recognized and discussed. 

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Ceramic additive manufacturing
GaN HEMTs
isolation distance
power electronics packaging
thermal resistance
wide band gap semiconductors
3D printers
Ceramic materials
Chip scale packages
Energy gap
Fabrication
Gallium nitride
High electron mobility transistors
III-V semiconductors
Industrial research
Thermal insulation
Ceramic additives
Ceramic package
Gallium nitride high-electron-mobility transistor
High electron-mobility transistors
Power devices
Silicon-based
Wide-band-gap semiconductor

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