WFRF:(McMahon J. H.)
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Unit processes for Cu/BCB redistribution layer bonding for 3D ICs
- McMahon, J J (author)
- Kumar, R J (author)
-
- Niklaus, Frank (author)
- KTH,Mikrosystemteknik
- show more...
- Lee, S H (author)
- Yu, J (author)
- Lu, J Q (author)
- Gutmann, R J (author)
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- (creator_code:org_t)
- WARRENDALE : MATERIALS RESEARCH SOCIETY, 2006
- 2006
- English.
- In: Advanced Metallization Conference 2005 (AMC 2005). - WARRENDALE : MATERIALS RESEARCH SOCIETY. - 1558998659 ; , s. 179-183
- Conference paper (peer-reviewed)
Abstract
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- A novel via-first, back-end-of-the-line (BEOL) compatible, monolithic wafer-level three-dimensional (3D) interconnect technology platform is presented. This platform employs wafer bonding of damascene-patterned metal/adhesive redistribution layers on two wafers to provide both high density of inter-wafer electrical interconnects and strong adhesive bond of two wafers in a single unit processing step. Two key steps for this approach are 1) fabrication of a metal/adhesive redistribution layer on the BEOLprocessed wafers by damascene patterning and 2) face-to-face alignment and bonding of two wafers utilizing copper/tantalum (Cu/Ta) and benzocyclobutene (BCB) redistribution layers. A baseline process and two modified processes are investigated toward evaluation of 1) acceptable wafer-scale nonplanarity, removal rate, and surface damage after CMP and 2) seamless bonding at all three possible interfaces with sufficiently strong BCB-to-BCB critical adhesion energy and Cu-to-Cu contact resistance. Migration of voids in the sputtered copper during bonding and etch profiles for different etch processes are discussed.
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- Lee, S H
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- Lu, J Q
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