WFRF:(Specht M)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02866naa a2200373 4500 | |
| 001 | oai:DiVA.org:hig-23222 | |
| 003 | SwePub | |
| 008 | 170105s1998 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-232222 URI |
| 040 | a (SwePub)hig | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Lastras-Martínez, L. F.u Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany4 aut |
| 245 | 1 0 | a Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap |
| 264 | 1 | c 1998 |
| 338 | a print2 rdacarrier | |
| 520 | a We report Reflectance Difference (RD) measurement on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430°C to desorb the As layer and form c(4 x 4) and (2 x 4) surface reconstructions, respectively. By modifying the surface reconstructure, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface. | |
| 650 | 7 | a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
| 653 | a Energy gap; Molecular beam epitaxy; Reflection; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Spectroscopy; Surface treatment | |
| 653 | a Aluminum arsenide; Optical anisotropy; Reflectance difference spectroscopy | |
| 653 | a Semiconductor quantum wells | |
| 700 | 1 | a Santos, P. V.u Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany4 aut |
| 700 | 1 | a Rönnow, Danielu Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany4 aut0 (Swepub:hig)dalrow |
| 700 | 1 | a Cardona, M.u Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany4 aut |
| 700 | 1 | a Specht, P.u Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany4 aut |
| 700 | 1 | a Eberl, K.u Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany4 aut |
| 710 | 2 | a Max-Planck-Institut für Festkörperforschung, Stuttgart, Germanyb Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany4 org |
| 773 | 0 | t Physica status solidi. A, Applied researchg 170:2, s. 317-321q 170:2<317-321x 0031-8965x 1521-396X |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-23222 |
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