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Influence of laser pulse width on absolute EUV-yield from Xe-clusters

Schnurer, M. (author)
Ter-Avetisyan, S. (author)
Stiel, H. (author)
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Vogt, Ulrich (author)
Radloff, W. (author)
Kalashnikov, M. (author)
Sandner, W. (author)
Nickles, P. V. (author)
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Springer Science and Business Media LLC, 2001
2001
English.
In: European Physical Journal D. - : Springer Science and Business Media LLC. - 1434-6060 .- 1434-6079. ; 14:3, s. 331-335
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Using 50 fs (similar to 2 x 10(18) W/cm(2)) and 2 ps (similar to 5 x 10(16) W/cm(2)) pulses from a Ti:Sa multi-TW laser at 800 nm wavelength large Xe-clusters (10(5)...10(6) atoms per cluster) have been excited. Absolute yield measurements of EUV-emission in a wavelength range between 10 nm and 15 nm in combination with cluster target variation were carried out. The ps-laser pulse has resulted in about 30% enhanced and spatially more uniform EUV-emission compared to fs-laser excitation. Circularly polarized laser light instead of linear polarization results in enhanced emission which is probably caused by electrons gaining higher energies by the polarization dependent optical field ionization process. An absolute emission efficiency at 13.4 nm of up to 0.8% in 2 pi sr and 2.2% bandwidth has been obtained.

Keyword

extreme-ultraviolet
atomic clusters
gas clusters
ray-emission
spectroscopy
lithography
size
kr

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ref (subject category)
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