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SiO$_x$ Patterned B...
SiO$_x$ Patterned Based Substrates Implemented in Cu(In,Ga)Se$_2$ Ultrathin Solar Cells : Optimum Thickness
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- Oliveira, Kevin (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Teixeira, Jennifer P. (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Chen, Wei-Chao (författare)
- Uppsala universitet,Solcellsteknik
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- Jioleo, Jackson Lontchi (författare)
- UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.
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- Oliveira, Antonio J. N. (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Caha, Ihsan (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Francis, Leonard Deepak (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Flandre, Denis (författare)
- UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.
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- Edoff, Marika, 1965- (författare)
- Uppsala universitet,Solcellsteknik,Fasta tillståndets elektronik
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- Fernandes, Paulo A. (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.
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- Salome, Pedro M. P. (författare)
- INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.
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INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal Solcellsteknik (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2022
- 2022
- Engelska.
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Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 12:4, s. 954-961
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Interface recombination in sub-mu m optoelectronics has a major detrimental impact on devices' performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiO$_x$ passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se$_2$ (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiO$_x$ layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiO$_x$ layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiO$_x$ based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiO$_x$).
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Passivation
- Substrates
- Photovoltaic cells
- Optical imaging
- Performance evaluation
- Lithography
- Integrated optics
- Cu(In
- Ga)Se2 (CIGS)
- electrical simulations
- high-performance substrate
- optical simulations
- rear passivation strategy
- silicon oxide (SiOx)
- ultrathin
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Oliveira, Kevin
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Teixeira, Jennif ...
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Chen, Wei-Chao
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Jioleo, Jackson ...
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Oliveira, Antoni ...
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Caha, Ihsan
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Francis, Leonard ...
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Flandre, Denis
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Edoff, Marika, 1 ...
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Fernandes, Paulo ...
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Salome, Pedro M. ...
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