Sökning: WFRF:(Beshkova Milena) > Investigation of Lo...
Fältnamn | Indikatorer | Metadata |
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000 | 02972naa a2200397 4500 | |
001 | oai:DiVA.org:liu-128857 | |
003 | SwePub | |
008 | 160602s2010 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1288572 URI |
024 | 7 | a https://doi.org/10.4028/www.scientific.net/MSF.645-648.1792 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a kon2 swepub-publicationtype |
100 | 1 | a Zoulis, Georgiosu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut |
245 | 1 0 | a Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy |
264 | 1 | c 2010 |
338 | a print2 rdacarrier | |
520 | a Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples. | |
650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
653 | a Epitaxial Growth | |
653 | a Low Temperature Photoluminescence | |
700 | 1 | a Sun, Jian Wuu Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut0 (Swepub:liu)jiasu75 |
700 | 1 | a Beshkova, Milenau Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)milbe24 |
700 | 1 | a Vasiliauskas, Remigijusu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)remva84 |
700 | 1 | a Juillaguet, S.u Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut |
700 | 1 | a Peyre, H.u Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut |
700 | 1 | a Syväjärvi, Mikaelu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)miksy08 |
700 | 1 | a Yakimova, Rositsau Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)rosia15 |
700 | 1 | a Camassel, J.u Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France4 aut |
710 | 2 | a Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, Franceb Halvledarmaterial4 org |
773 | 0 | t Silicon Carbide and Related Materials 2009g , s. 179-182q <179-182 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128857 |
856 | 4 8 | u https://doi.org/10.4028/www.scientific.net/MSF.645-648.179 |
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