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Growth of epitaxial...
Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition
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- Tungasmita, Sukkaneste (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Persson, Per (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Seppänen, Timo (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Hultman, Lars (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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- Birch, Jens (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 389-3, s. 1481-1484
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
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- (SiC)(X)(AIN)(1-X) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P-Al/P-SiC). The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AIN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AINC(X) (0less than or equal toxless than or equal to0.1), indicating carbon substitution in AIN. CL spectra show defect-related peaks of similar to3.87 and similar to4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at similar to3.40 eV.
Keyword
- AlN
- epitaxial
- SiC
- sputter
- thin film
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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