Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping

Forsen, E (författare)

Carlberg, Patrick (författare): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Montelius, Lars (författare): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Boisen, A (författare)

(creator_code:org_t)

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Abstract Ämnesord

Stäng

We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm acetone dissolves the PMMA and lifts off the metal layer, then warm Remover PG removes the LOR and any remaining metal. Metal structures with line widths down to 600 nm and dots with 600 mn diameters are presented. (C) 2004 Elsevier B.V. All rights reserved.

Av författaren/redakt...: Forsen, E; Carlberg, Patric ...; Montelius, Lars; Boisen, A

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