WFRF:(Monaghan K)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02903naa a2200661 4500 | |
| 001 | oai:DiVA.org:kth-151171 | |
| 003 | SwePub | |
| 008 | 140915s2011 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1511712 URI |
| 024 | 7 | a https://doi.org/10.4028/www.scientific.net/AMR.276.872 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a kon2 swepub-publicationtype |
| 100 | 1 | a Gomeniuk, Y. Y.4 aut |
| 245 | 1 0 | a Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs |
| 264 | 1 | c 2011 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20140917 | |
| 520 | a The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng |
| 653 | a Channel mobility | |
| 653 | a High-k oxide | |
| 653 | a Interface states density | |
| 653 | a LaLuO3 | |
| 653 | a Lanthanum lutetium oxide | |
| 653 | a Molecular beam deposition MBD | |
| 653 | a MOSFET | |
| 653 | a SOI | |
| 653 | a Threshold voltage | |
| 653 | a Transconductance | |
| 653 | a High-k oxides | |
| 653 | a LaLuO<sub>3</sub> | |
| 653 | a MOS-FET | |
| 653 | a Characterization | |
| 653 | a Chemical modification | |
| 653 | a Electric properties | |
| 653 | a Gates (transistor) | |
| 653 | a Insulating materials | |
| 653 | a Lanthanum oxides | |
| 653 | a MOS capacitors | |
| 653 | a Semiconductor devices | |
| 653 | a MOSFET devices | |
| 700 | 1 | a Gomeniuk, Y. V.4 aut |
| 700 | 1 | a Nazarov, A. N.4 aut |
| 700 | 1 | a Hurley, P. K.4 aut |
| 700 | 1 | a Cherkaoui, K.4 aut |
| 700 | 1 | a Monaghan, S.4 aut |
| 700 | 1 | a Hellström, Per-Eriku KTH4 aut0 (Swepub:kth)u1hzct4j |
| 700 | 1 | a Gottlob, H. D. B.4 aut |
| 700 | 1 | a Schubert, J.4 aut |
| 700 | 1 | a Lopes, J. M. J.4 aut |
| 710 | 2 | a KTH4 org |
| 773 | 0 | t 6th International Workshop on Semiconductor-on-Insulator Materials and Devicesg , s. 87-93q <87-93z 9783037851784 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-151171 |
| 856 | 4 8 | u https://doi.org/10.4028/www.scientific.net/AMR.276.87 |
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- Gomeniuk, Y. Y.
- Gomeniuk, Y. V.
- Nazarov, A. N.
- Hurley, P. K.
- Cherkaoui, K.
- Monaghan, S.
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