Sökning: WFRF:(Rorsman Niklas 1964) >
Investigation of th...
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
-
- Fagerlind, Martin, 1980 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers
-
- Allerstam, Fredrik, 1978 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers
-
- Sveinbjörnsson, Einar, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers
-
visa fler...
-
- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers
-
- Kakanakova-Georgieva, Anelia, 1970- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Lundskog, Anders (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Forsberg, Urban (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- Engelska.
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 108:1
- Relaterad länk:
-
http://publications.... (primary) (free)
-
visa fler...
-
http://publications....
-
https://liu.diva-por... (primary) (Raw object)
-
https://research.cha...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428442]
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- layers
- field-effect transistors
- gan
- surface passivation
- algan/gan hemts
- growth
- TECHNOLOGY
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas