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Thermal Study of th...
Thermal Study of the High-Frequency Noise in GaN HEMTs
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- Thorsell, Mattias, 1982 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Kristoffer, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Fagerlind, Martin, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sudow, Mattias, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Nilsson, Per-Åke, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2009
- 2009
- English.
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In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:1, s. 19-26
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Abstract
Subject headings
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- The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297–398 K. The access resistances ${ R}_{ S}$ and ${ R}_{ D}$ have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a ${hbox{2}}times {hbox{100}} mu{hbox{m}}$ GaN HEMT. ${ R}_{ S}$ and ${ R}_{ D}$ show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Gallium nitride (GaN) modeling noise temperature measurement thermal resistance
Publication and Content Type
- art (subject category)
- ref (subject category)
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