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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00004731naa a2200613 4500
001oai:lup.lub.lu.se:8b5a81b5-64eb-4f4c-a25d-7462b864ddca
003SwePub
008170223s2017 | |||||||||||000 ||eng|
0247 a https://lup.lub.lu.se/record/8b5a81b5-64eb-4f4c-a25d-7462b864ddca2 URI
0247 a https://doi.org/10.1021/acs.nanolett.6b040362 DOI
040 a (SwePub)lu
041 a engb eng
042 9 SwePub
072 7a art2 swepub-publicationtype
072 7a ref2 swepub-contenttype
1001 a Generalov, Alexanderu Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory4 aut0 (Swepub:lu)maxl-arg
2451 0a Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions
264 c 2017-01-04
264 1b American Chemical Society (ACS),c 2017
300 a 10 s.
520 a Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin-orbit and exchange-magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653 a antiferromagnetism
653 a ARPES
653 a exchange-magnetic interaction
653 a rare-earth intermetallics
653 a Spin-orbit coupling
7001 a Otrokov, Mikhail M.u Donostia International Physics Center (DIPC),Tomsk State University4 aut
7001 a Chikina, Allau Dresden University of Technology4 aut
7001 a Kliemt, Kristinu Goethe University4 aut
7001 a Kummer, Kurtu European Synchrotron Radiation Facility4 aut
7001 a Höppner, Marcu Max Planck Institute for Solid State Research4 aut
7001 a Güttler, Monikau Dresden University of Technology4 aut
7001 a Seiro, Silviau Max Planck Institute for Chemical Physics of Solids4 aut
7001 a Fedorov, Alexanderu Leibniz Institute for Solid State and Materials Research4 aut
7001 a Schulz, Susanneu Dresden University of Technology4 aut
7001 a Danzenbächer, Steffenu Dresden University of Technology4 aut
7001 a Chulkov, Evgueni V.u Donostia International Physics Center (DIPC),Tomsk State University,Saint Petersburg State University4 aut
7001 a Geibel, Christophu Max Planck Institute for Chemical Physics of Solids4 aut
7001 a Laubschat, Clemensu Dresden University of Technology4 aut
7001 a Dudin, Pavelu Diamond Light Source4 aut
7001 a Hoesch, Moritzu Diamond Light Source4 aut
7001 a Kim, Timuru Diamond Light Source4 aut
7001 a Radovic, Milanu Paul Scherrer Institute4 aut
7001 a Shi, Mingu Paul Scherrer Institute4 aut
7001 a Plumb, Nicholas C.u Paul Scherrer Institute4 aut
7001 a Krellner, Corneliusu Goethe University4 aut
7001 a Vyalikh, Denis V.u Basque Foundation for Science,Donostia International Physics Center (DIPC),Paul Scherrer Institute,Dresden University of Technology4 aut
7102 a Lunds universitetb MAX IV-laboratoriet4 org
7730 t Nano Lettersd : American Chemical Society (ACS)g 17:2, s. 811-820q 17:2<811-820x 1530-6984x 1530-6992
8564 u http://dx.doi.org/10.1021/acs.nanolett.6b04036y FULLTEXT
8564 8u https://lup.lub.lu.se/record/8b5a81b5-64eb-4f4c-a25d-7462b864ddca
8564 8u https://doi.org/10.1021/acs.nanolett.6b04036

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