Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si

QC 20100525
Radiation-induced divacancy-related levels in high-purity oxygen-enriched n-type silicon have been studied with the use of deep level transient spectroscopy (DLTS) and Laplace-DLTS. It has been shown that heat treatment at 250degreesC results in a shift of the divacancy (V-2)-related peaks observed by 'standard' DLTS. Using Laplace-DLTS it is demonstrated that the shift is due to annealing of V-2 and formation of a new acceptor centre. The new centre has presumably two negative charge states: singly and doubly negative. The formation of the new centre holds a close one-to-one correlation with the annealing of V-2, indicating that the new centre is a result of divacancy interaction with an impurity or a defect. The close position of the electronic levels of the new centre to that of V-2 suggests a similar electronic and microscopic structure of the new centre to V-2, and a tentative identification is a divacancy-oxygen centre.

Alfieri, G. (författare)
Avset, B. S. (författare)
Hallén, Anders.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1 (författare)
Svensson, B. G. (författare)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Ingår i:Journal of Physics: IOP Publishing15:39, s. S2771-S27770953-89841361-648X

Av författaren/redakt...: Monakhov, E. V.; Alfieri, G.; Avset, B. S.; Hallén, Anders.; Svensson, B. G.

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