WFRF:(Joyce S.)
Sökning: WFRF:(Joyce S.) > (1995-1999) > The bonding of CAs ...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 04127naa a2200433 4500 | |
| 001 | oai:DiVA.org:ltu-15351 | |
| 003 | SwePub | |
| 008 | 160929s1996 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-153512 URI |
| 024 | 7 | a https://doi.org/10.1063/1.3638032 DOI |
| 040 | a (SwePub)ltu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Ashwin, M.J.u Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London4 aut |
| 245 | 1 0 | a The bonding of CAs acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon |
| 264 | 1 | b AIP Publishing,c 1996 |
| 338 | a print2 rdacarrier | |
| 500 | a Godkänd; 1996; 20090514 (andbra) | |
| 520 | a InxGa1-xAs layers (0≤x≤0.37) doped with carbon (>1020 cm-3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A-1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H-CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm-1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm-1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In-CAs bonds as well as Ga-CAs bonds are formed, whereas there is no evidence for the formation of In-CAs bonds in samples doped with C derived from trimethylgallium or solid sources | |
| 650 | 7 | a NATURVETENSKAPx Matematikx Beräkningsmatematik0 (SwePub)101052 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Mathematicsx Computational Mathematics0 (SwePub)101052 hsv//eng |
| 653 | a Scientific Computing | |
| 653 | a Teknisk-vetenskapliga beräkningar | |
| 700 | 1 | a Pritchard, R.E.u Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London4 aut |
| 700 | 1 | a Newman, R.C.u Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London4 aut |
| 700 | 1 | a Joyce, T.B.u Department of Materials Science and Engineering, Liverpool University4 aut |
| 700 | 1 | a Bullough, T.J.u Department of Materials Science and Engineering, Liverpool University4 aut |
| 700 | 1 | a Wagner, J.u Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg4 aut |
| 700 | 1 | a Jeynes, C.u Department of Electronic and Electrical Engineering, University of Surrey, Guildford4 aut |
| 700 | 1 | a Breuer, S.J.u Department of Physics, University of Exeter4 aut |
| 700 | 1 | a Jones, R.u Department of Physics, University of Exeter4 aut |
| 700 | 1 | a Briddon, P.R.u Department of Physics, University of Newcastle4 aut |
| 700 | 1 | a Öberg, Svenu Luleå tekniska universitet,Matematiska vetenskaper4 aut0 (Swepub:ltu)oberg |
| 710 | 2 | a Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, Londonb Department of Materials Science and Engineering, Liverpool University4 org |
| 773 | 0 | t Journal of Applied Physicsd : AIP Publishingg 80:12, s. 6754-6760q 80:12<6754-6760x 0021-8979x 1089-7550 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-15351 |
| 856 | 4 8 | u https://doi.org/10.1063/1.363803 |
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