Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

• The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a dose of 1 X 10(12) cm(-2). One configuration of the bistable defect leads to two levels in the band gap, 0.42 eV (M-1) and 0.7-0.8 eV (M-3) below the conduction band edge (E-C), and another leads to one level (M-2) at E-C-0.7 eV. The defect can be switched back and forth between the two configurations by varying the applied bias and the sample temperature. Isochronal and isothermal annealing shows that the defect anneals out between 310 degrees C and 370 degrees C with a first-order kinetics process. The origin of the defect is not known but it is implantation-induced and a low-order complex.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC

DLTS

bistable

ion implantation

4h silicon-carbide

chemical-vapor-deposition

epitaxial layers

centers

Electronics

Elektronik

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