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  • Keqi, A.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)

Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

  • Artikel/kapitelEngelska2018

Förlag, utgivningsår, omfång ...

  • 2018
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:uu-354111
  • https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-354111URI
  • https://doi.org/10.1103/PhysRevB.97.155149DOI

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  • Språk:engelska
  • Sammanfattning på:engelska

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  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

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Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Gehlmann, M.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany (författare)
  • Conti, G.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Nemsak, S.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany (författare)
  • Rattanachata, A.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Minar, J.Univ West Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic (författare)
  • Plucinski, L.Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany (författare)
  • Rault, J. E.Synchrotron SOLEIL, F-91192 St Aubin, France (författare)
  • Rueff, J. P.Synchrotron SOLEIL, F-91192 St Aubin, France (författare)
  • Scarpulla, M.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA (författare)
  • Hategan, M.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA (författare)
  • Pálsson, Gunnar K.Uppsala universitet,Materialfysik,Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA(Swepub:uu)gukpa839 (författare)
  • Conlon, C.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Eiteneer, D.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Saw, A. Y.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Gray, A. X.Temple Univ, Dept Phys, Philadelphia, PA 19122 USA (författare)
  • Kobayashi, K.Japan Atom Energy Agcy, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan (författare)
  • Ueda, S.Natl Inst Mat Sci, Synchrotron Xray Stn SPring 8, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan;NIMS, Res Ctr Adv Measurement & Characterizat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan (författare)
  • Dubon, O. D.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA (författare)
  • Schneider, C. M.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany (författare)
  • Fadley, C. S.Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA (författare)
  • Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USAUniv Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Physical Review B97:152469-99502469-9969

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