Plasma-assisted MBE growth and characterization of InN on sapphire

Ivanov, SV (author)

Shubina, Tatiana (author): Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi

Jmerik, VN (author)

Vekshin, VA (author)

Kop'ev, PS (author)

Monemar, Bo (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

(creator_code:org_t)

Elsevier BV, 2004
2004
English.
In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 269:1

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

We report on a close correlation between the growth conditions of InN/Al2O3 (0 0 0 1) epilayers grown by plasma-assisted molecular beam epitaxy (MBE), their optical properties in the IR range, and the In clustering in the layers. High-spatial resolution techniques, namely micro-cathodoluminesesence, back-scattered electron imaging and energy dispersive X-ray analysis, were used to establish this correlation. The In-rich growth conditions, achieved by increasing either the growth temperature or the effective In/N flux ratio, causes the In clustering in InN, responsible in our samples for the 0.7-0.8 eV luminescence and IR optical absorption. Growth under In/N = 1: 1 conditions slightly shifted to the N-rich side generally produces InN layers without visible In clusters, having an optical absorption edge around 1.4 eV. A possible mechanism of In cluster formation is suggested on the basis of thermodynamic considerations for InN MBE growth. (C) 2004 Elsevier B.V. All rights reserved.

By the author/editor: Ivanov, SV; Shubina, Tatiana; Jmerik, VN; Vekshin, VA; Kop'ev, PS; Monemar, Bo

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