Comment on "Pulsed laser deposition and properties of M(n+1)AX(x) phase formulated Ti3SiC2 thin films''

• A recent paper by Hu et al. claimed synthesis of the MAX-phase Ti3SiC2 at 100 - 300 degreesC using pulsed laser deposition. In this comment, we find that the evidence presented by Hu et al. is insufficient to show Ti3SiC2 formation. In fact, there is a simpler interpretation of their results from X-ray diffraction and transmission electron microscopy, namely that the material produced is a cubic TiC-based compound.

Nyckelord

Ti3SiC2

MAX phase

titanium carbide

thin films

pulsed laser deposition

X-ray diffraction

transmission electron microscopy

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