Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth

• InP is grown on Si by nano-epitaxial lateral overgrowth (NELOG or nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Surface morphology is characterized with AFM and profilometer and optical quality assessed by Micro Photoluminescence measurements (mu-PL). Results show that growth conditions affect both morphology and optical quality, with thicker layers generally corresponding to better surface morphology. Lower growth temperature seems to improve surface morphology irrespective of thickness, and ELOG layers exhibit significantly better morphology than the planar layer.

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NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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PHOTONICS

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Physics

Fysik

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