RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry

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Fältnamn	Indikatorer	Metadata
000		02820naa a2200373 4500
001		oai:DiVA.org:kth-93106
003		SwePub
008		120411s2008 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-931062 URI
024	7	a https://doi.org/10.1109/CSICS.2008.202 DOI
040		a (SwePub)kth
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a kon2 swepub-publicationtype
100	1	a Bagger, Reza,d 1962-u KTH,Elektroniksystem4 aut0 (Swepub:kth)u178bxcx
245	1 0	a RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry
264	1	b IEEE,c 2008
338		a print2 rdacarrier
500		a QC 20120919
520		a A highly linear wideband power amplifier IC with low memory effect for W-CDMA applications is presented utilizing Si LDMOS process technology. The IC was optimized to reduce typical low frequency gain peak often observed in LDMOS power devices. Topology of the interstage matching contributes to reduction of the electrical memory effect to specification level of maximum 2 dB imbalance over power between upper and lower Adjacent Channel Power Ratio when using II-tone wideband modulated signal. The on-chip temperature compensation circuitry tracks the active device temperature characteristic without degradation of the linearity or worsens the memory effect. The measured gain of the IC was 28.5 dB and 3-dB bandwidth of 600 MHz around 2100 MHz was achieved. The IC attained -50 dBc ACPR at 5 W output power. At power level of 45 W and IMD3 = -30dBc (two-tone) the IC exhibited power densities in excess of 469 mW/mm, in which matching losses were included. The IC demonstrated state-of-the-art RF power performance in terms of good linearity, low memory effects, well-suppressed low frequency gain peak and temperature tracking without linearity and IMD balance degradation.
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653		a Degradation
653		a Gallium alloys
653		a Linearization
653		a MOS devices
653		a Power amplifiers
653		a Semiconducting gallium
700	1	a Olsson, Håkan,d 1957-u KTH,Elektroniksystem4 aut0 (Swepub:kth)u16p67rw
710	2	a KTHb Elektroniksystem4 org
773	0	t 2008 IEEE CSIC Symposiumd : IEEEg , s. 60-63q <60-63z 9781424419395
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-93106
856	4 8	u https://doi.org/10.1109/CSICS.2008.20

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Av författaren/redakt...: Bagger, Reza, 19 ...; Olsson, Håkan, 1 ...

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