Sökning: WFRF:(Törndahl Tobias) > A model-based metho...
Fältnamn | Indikatorer | Metadata |
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000 | 05106naa a2200565 4500 | |
001 | oai:DiVA.org:uu-182451 | |
003 | SwePub | |
008 | 121010s2012 | |||||||||||000 ||eng| | |
009 | oai:lup.lub.lu.se:d7a8cb2f-afec-4f18-aad6-709ee12353b9 | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1824512 URI |
024 | 7 | a https://doi.org/10.1016/j.ces.2012.07.0152 DOI |
024 | 7 | a https://lup.lub.lu.se/record/31896622 URI |
040 | a (SwePub)uud (SwePub)lu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Holmqvist, Andersu Lund University,Lunds universitet,Avdelningen för kemiteknik,Institutionen för processteknik och tillämpad biovetenskap,Institutioner vid LTH,Lunds Tekniska Högskola,Division of Chemical Engineering,Department of Process and Life Science Engineering,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)chem-anh |
245 | 1 0 | a A model-based methodology for the analysis and design of atomic layer deposition processes—Part I :b Mechanistic modelling of continuous flow reactors |
264 | 1 | b Elsevier BV,c 2012 |
338 | a print2 rdacarrier | |
520 | a This paper presents the development of an experimentally validated model that mechanistically comprehends the complex interaction between the gas-phase fluid dynamics, the mass transport of individual species, and the heterogeneous gas–surface reaction mechanism in a continuous cross-flow atomic layer deposition (ALD) reactor. The developed ALD gas–surface reaction mechanism, purely based on consecutive and parallel elementary Eley–Rideal reaction steps, was incorporated into the computational fluid dynamic representation of the equipment-scale. Thereby, the model mechanistically relates local gas-phase conditions in the vicinity of the substrate surface to the transient production and consumption of the fractional surface coverage of chemisorbed species, ultimately underlying epitaxial film growth. The model is oriented towards optimization and control and enables identification of substrate film thickness uniformity sensitivities to process operating parameters, reactor system design and gas flow distribution. For the experimental validation of the derived mathematical model, a detailed experimental investigation with the focus on the impact of process operating parameters on the spatial evolution of ZnO film thickness profile was performed. The controlled deposition of ZnO from Zn(C2H5)2 and H2O was carried out in the continuous cross-flow ALD reactor system F-120 by ASM Microchemistry Ltd. and ex situ film thickness measurements at a discrete set of sampling positions on the substrate were performed using X-ray reflectivity and X-ray fluorescence analysis. The experimental results reported here, underscore the importance of substrate-scale uniformity measurements in developing mechanistic ALD process models with high predictability of the dynamic evolution of the spatially dependent film thickness profile. The experimental validation and extensive mechanistic analysis of the ALD reactor model are presented in the second article of this series. | |
650 | 7 | a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Kemiteknik0 (SwePub)2042 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Chemical Engineering0 (SwePub)2042 hsv//eng |
653 | a Atomic layer deposition | |
653 | a Ex situ film characterization | |
653 | a Mathematical modelling | |
653 | a Computational fluid dynamics | |
653 | a Transport processes | |
653 | a Reaction engineering | |
653 | a Engineering Science with specialization in Electronics | |
653 | a Teknisk fysik med inriktning mot elektronik | |
653 | a Atomic layer deposition | |
653 | a Ex situ film characterization | |
653 | a Mathematical | |
653 | a modelling | |
653 | a Computational fluid dynamics | |
653 | a Transport processes | |
653 | a Reaction | |
653 | a engineering | |
700 | 1 | a Törndahl, Tobiasu Uppsala universitet,Fasta tillståndets elektronik4 aut0 (Swepub:uu)totor079 |
700 | 1 | a Stenström, Stigu Lund University,Lunds universitet,Avdelningen för kemiteknik,Institutionen för processteknik och tillämpad biovetenskap,Institutioner vid LTH,Lunds Tekniska Högskola,Division of Chemical Engineering,Department of Process and Life Science Engineering,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)kat-sst |
710 | 2 | a Avdelningen för kemiteknikb Institutionen för processteknik och tillämpad biovetenskap4 org |
773 | 0 | t Chemical Engineering Scienced : Elsevier BVg 81, s. 260-272q 81<260-272x 0009-2509x 1873-4405 |
856 | 4 | u http://dx.doi.org/10.1016/j.ces.2012.07.015y FULLTEXT |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-182451 |
856 | 4 8 | u https://doi.org/10.1016/j.ces.2012.07.015 |
856 | 4 8 | u https://lup.lub.lu.se/record/3189662 |
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