Sökning: WFRF:(Janusz M) > Bismuth-stabilized ...
Fältnamn | Indikatorer | Metadata |
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000 | 05611naa a2201129 4500 | |
001 | oai:DiVA.org:kth-18114 | |
003 | SwePub | |
008 | 100805s2008 | |||||||||||000 ||eng| | |
009 | oai:research.chalmers.se:7cc826c4-e6d4-482b-8427-96cd1572bf45 | |
009 | oai:lup.lub.lu.se:ee7c217f-930a-4984-85a9-f2846a3a9329 | |
009 | oai:DiVA.org:uu-137370 | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-181142 URI |
024 | 7 | a https://doi.org/10.1103/PhysRevB.78.1953042 DOI |
024 | 7 | a https://research.chalmers.se/publication/875682 URI |
024 | 7 | a https://lup.lub.lu.se/record/13759872 URI |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1373702 URI |
040 | a (SwePub)kthd (SwePub)cthd (SwePub)lud (SwePub)uu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Punkkinen, M. P. J.4 aut |
245 | 1 0 | a Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces :b Combined first-principles, photoemission, and scanning tunneling microscopy study |
264 | 1 | c 2008 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 | |
520 | a Bismuth adsorbate-stabilized (2x1) and (2x4) reconstructions of the GaAs(100) surfaces have been studied by first-principles calculations, valence-band and core-level photoelectron spectroscopies, and scanning tunneling microscopy. It is demonstrated that large Bi atom size leads to the formation of the pseudogap at the Fermi energy and to the lower energy of an adsorbate-derived surface band, which contributes to the stabilization of the exceptional Bi/GaAs(100)(2x1) reconstruction. It is proposed that the Bi/GaAs(100)(2x4) reconstructions include asymmetric mixed Bi-As dimers, in addition to the Bi-Bi dimers. Based on the calculations, we solve the atomic origins of the surface core-level shifts (SCLSs) of the Bi 5d photoemission spectra from the Bi/GaAs(100)(2x4) surfaces. This allows for resolving the puzzle related to the identification of two SCLS components often found in the measurements of the Bi 5d and Sb 4d core-level emissions of the Bi/III-V and Sb/III-V(100)(2x4) surfaces. Finally, the reason for the absence of the common (2x4)-beta 2 structure and additional support for the stability of the (2x1) structure on the Bi/III-V(100) surfaces are discussed in terms of Bi atom size and subsurface stress. | |
650 | 7 | a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng |
650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
653 | a ab initio calculations | |
653 | a adsorbed layers | |
653 | a bismuth | |
653 | a core levels | |
653 | a energy | |
653 | a gap | |
653 | a Fermi level | |
653 | a gallium arsenide | |
653 | a III-V semiconductors | |
653 | a photoelectron | |
653 | a spectra | |
653 | a scanning tunnelling microscopy | |
653 | a surface reconstruction | |
653 | a valence bands | |
653 | a semiconductor 001 surfaces | |
653 | a initio molecular-dynamics | |
653 | a total-energy | |
653 | a calculations | |
653 | a augmented-wave method | |
653 | a x 4) surface | |
653 | a atomic-structure | |
653 | a electronic-structure | |
653 | a basis-set | |
653 | a bi | |
653 | a gaas(001) | |
653 | a surface reconstruction | |
653 | a scanning tunnelling microscopy | |
653 | a spectra | |
653 | a photoelectron | |
653 | a III-V semiconductors | |
653 | a gallium arsenide | |
653 | a Fermi level | |
653 | a gap | |
653 | a energy | |
653 | a core levels | |
653 | a bismuth | |
653 | a ab initio calculations | |
653 | a adsorbed layers | |
653 | a valence bands | |
653 | a Physics | |
700 | 1 | a Laukkanen, P.4 aut |
700 | 1 | a Komsa, H. P.4 aut |
700 | 1 | a Ahola-Tuomi, M.4 aut |
700 | 1 | a Rasanen, N.4 aut |
700 | 1 | a Kokko, K.4 aut |
700 | 1 | a Kuzmin, M.4 aut |
700 | 1 | a Adell, Johan,d 1980u Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory4 aut0 (Swepub:lu)maxl-jae |
700 | 1 | a Sadowski, Januszu Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory4 aut0 (Swepub:lu)maxl-jsa |
700 | 1 | a Perala, R. E.4 aut |
700 | 1 | a Ropo, M.4 aut |
700 | 1 | a Rantala, T. T.4 aut |
700 | 1 | a Vayrynen, I. J.4 aut |
700 | 1 | a Pessa, M.4 aut |
700 | 1 | a Vitos, Leventeu Uppsala universitet,KTH,Tillämpad materialfysik,Materialteori4 aut0 (Swepub:uu)lvi21721 |
700 | 1 | a Kollar, J.4 aut |
700 | 1 | a Mirbt, Susanneu Uppsala universitet,Materialteori4 aut0 (Swepub:uu)susamirb |
700 | 1 | a Johansson, Börjeu Uppsala universitet,KTH,Tillämpad materialfysik,Materialteori4 aut0 (Swepub:uu)borjejs |
710 | 2 | a Lunds universitetb MAX IV-laboratoriet4 org |
773 | 0 | t Physical Review B. Condensed Matter and Materials Physicsg 78, s. 195304-q 78:19x 1098-0121x 1550-235X |
773 | 0 | t Physical Review Bg 78, s. 195304-q 78<195304- |
856 | 4 | u http://dx.doi.org/10.1103/PhysRevB.78.195304y FULLTEXT |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-18114 |
856 | 4 8 | u https://doi.org/10.1103/PhysRevB.78.195304 |
856 | 4 8 | u https://research.chalmers.se/publication/87568 |
856 | 4 8 | u https://lup.lub.lu.se/record/1375987 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-137370 |
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